A novel trench clustered insulated gate bipolar transistor (TCIGBT)

A new trench clustered insulated gate bipolar transistor (TCIGBT) is reported. In this device, a multitude of UMOS cathode cells is enclosed within a common n-well and p-well. The TCIGBT provides a unique "self-clamping" feature to protect the trenches from high electric fields. The simulation results based on 1.2 kV nonpunchthrough technology indicate an improvement of 25% in on state and 28% in the turn-off losses in comparison to the state-of-the-art trench IGBT. The saturation current levels of the TCIGBT, which can be designed independent of the forward drop, are also lower.