MBE of InAsSb Solid Solutions on Misoriented GaAs(100) Substrates: Experiment and Kinetic Analysis

The kinetic model of composition forming process in cation sublattice of the InAs
_x
Sb
_1-x
solid solution during molecular beam epitaxy (MBE) is proposed. This model describes well the obtained experimental data dependence of InAs
_x
Sb
_1-x
solid solution composition on such parameters, as GaAs(001) substrate misorientation degree, growth temperature and molecular form of arsenic in the flux (As
₂
or As
₄
). The obtained results can be used to select optimal conditions of InAs
_x
Sb
_1-x
solid solution growth with preassigned composition by MBE method.