Leakage Current Analysis for Epitaxial Silicon Pulse Radiation Detector

The leakage current of radiation detectors is a vital parameter. The Leakage current analysis for pulse radiation detector on epitaxial silicon is performed by using the gate-controlled diodes. As comparison, similar analysis on 300μm thick silicon wafer is carried out as well. Comparable level of surface states leakage currents are achieved. It is found that the minority carrier lifetime decreases with main junction reverse bias voltage for epitaxial silicon, however, it increases for 300μm thick silicon wafer. The underlying physical reason is analyzed in this work, improving the understanding of leakage current mechanism for pulse radiation detectors. Radiation response detectors were fabricated on epitaxial silicon wafers. Low leakage current radiation response detector is achieved and rising time of detected pulse is measured to be 3.5ns by using pulse laser for detection test.