Parallel Association of Power Semiconductors: An Experimental Evaluation with IGBTs and MOSFETs

This paper presents a study on the parallel association of power semiconductors. The main purpose of this paper is to demonstrate that the parallel association of lower rated power semiconductors can be more advantageous than the use of a single higher rated power semiconductor, both economically and in terms of dynamic performance, i.e., switching behavior and semiconductor temperature. In this context, two different power semiconductor technologies were tested: (1) Insulated gate bipolar transistors (IGBTs); and (2) Metal oxide semiconductor field effect transistors (MOSFETs). For each technology, the adopted methodology consisted of verifying the dynamic performance of a single higher rated power semiconductor, comparing it with the dynamic performance of a set of five parallel-connected lower rated power semiconductors, focusing on the current sharing between the devices. The obtained experimental results demonstrate that the parallel connection of lower rated power semiconductors can be advantageous over the use of a single higher rated power semiconductor above certain power levels, offering better switching characteristics and lower cost.