Reliability Evaluation of Silicon Interconnect Fabric Technology

In this paper, we examine the effect of electrostatic discharge (ESD)and thermal compression bonding on the integrity of dielet assembly on the silicon interconnect fabric (Si-IF)technology. Our preliminary results suggest that the Si-IF assembly process is robust to ESD events. This simplifies and possibly eliminates the ESD protection requirements on dielets. We demonstrate that a thin film dielet, with ~ 6 nm thick silicon dioxide, can sustain bonding pressure of up to 200 MPa at a bonding temperature of 250°C. To further investigate the effect of thermal compression bonding on dielets, bonding pressure simulations are studied for a typical dielet with 300 nm oxide at a bonding pressure of 100 MPa.