MOSFET modeling into the ballistic regime

Physically-based full band Monte-Carlo simulations are compared with drift-diffusion simulations for channel lengths from 150 nm to 40 nm. Errors in the drift diffusion simulated I/sub ON/, g/sub m/ and channel velocities are quantified through comparison with Monte-Carlo simulations under realistic surface scattering conditions. Suggestions for improving the drift-diffusion results are also discussed.