A Si IGBT and SiC MOSFET Hybrid Shunt Active Filter

This paper proposes an energy efficient, cost competitive hybrid Shunt Active Filter (SAF) topology with superior current harmonic rejection capability compared to Si IGBT based SAF solutions. Generally, Si IGBT based shunt active filter designs face a serious challenge for higher order harmonic mitigations due to its restricted switching frequency of operation (typically limited to 10 kHz). In this paper, a hybrid shunt active filter (HSAF) solution is proposed where one Si IGBT based inverter eliminates lower order harmonics ($5^{th}$ and $7^{th}$) and a SiC MOSFET based inverter draws all higher order harmonics (1$1^{th}$, 1$3^{th}$, The Si IGBT is rated for around 90% of the total load kVA rating but it is switched at 5 kHz switching frequency. On the other hand, SiC MOSFET based inverter is much smaller (nearly 15%) in size but it is switched at 30 kHz to eliminate the higher order harmonics more efficiently. The proposed topology is verified by simulation and experimental results.