14-nm FinFET 1.5 Mb Embedded High-K Charge Trap Transistor One Time Programmable Memory Using Differential Current Sensing

An 8Kx192b charge trap transistor one time programmable memory (OTPM) is designed and manufactured in GLOBALFOUNDRIES 14-nm bulk FinFET technology without process adders or additional masks. A write timer state machine issues multicycle 192b parallel programming with per bit overwrite protection to minimize stress conditions during a write. On-chip generated voltages are temperature dependent, enabling writes and reads at military grade temperatures. A differential current sense amplifier with self-biased margining circuitry enables programming the OTPM twin cell with known repeatable margin across process-voltage-temperature. Hardware qualification certifies the OTPM to a 10-year 105 °C data retention specification and <;3 PPM end of life bit error rate pre-ECC.