Nanoscale Tunnel FETs for Internet-of-Things Applications

In this work, the RF performance comparison of lateral and vertical tunnel FETs is presented in the context of ultra low power (ULP) Internet-of-Things (IoT) sensor node circuit applications. It is demonstrated that at low drive currents ( ~ 1μA/μm), LTFETs outperform VTFETs by an order higher cut-off frequency (f
_T
) of 10 GHz, maximum oscillation frequency (f
_MAX
) of 100 GHz and 50% higher intrinsic gain (A
_vo
). The results show that the TFETs are promising as ULP devices (V
_ds
=0.5 V or less).