Design and Simulation of AlGaAs/InGaAs/GaAs Based Pseudomorphic HEMT Using SILVACO ATLASTM

The High Electron Mobility Transistor (HEMT) is a field effect transistor which is used to give very high performance at microwave and radio frequencies, exhibiting a low noise figure. The HEMT works on the principle of formation of Two Dimensional Electron Gas (2DEG) where there are very less electron collisions. In this work we have designed and observed the characteristics of a Pseudomorphic HEMT (P-HEMT) with an AlGaAs supply layer, InGaAs channel layer and a GaAs substrate which is of p-type. The output characteristics curve (ID-VDS), transfer characteristics curve, transconductance (gm) and cutoff frequency (fT) have been observed. A transconductance of 281.296mS/mm, threshold voltage V
_th
= -1.1V at V
_DS
= 6V and a cut-off frequency of 18GHz can be easily seen from the simulation result of the HEMT. The design is simulated using SILVACO ATLAS.