Flexible Internet-of-Things Circuits Based on Thin-Film Transistors

Amorphous metal-oxide thin-film transistors (TFTs) are ideal candidates as key technology for item-level Internet-of-Things applications, because they have the potential of being a low-cost technology exhibiting great mechanical performance as it can be fabricated directly on flexible substrates. As such, ultrathin, flexible integrated circuits can be seamlessly integrated into objects. The most mainstream metal-oxide TFT technology is based on Indium-Gallium-Zinc-Oxide (IGZO) as semiconductor, resulting in n-type transistors with an electron mobility around 10-20cm
²
/Vs [1].