MIS Structures with Ruo2 Schottky Contact for Photoelectrochemical Water Splitting

This paper describes fabrication and characterisation of RuO
₂
based metal-insulator-semiconductor (MIS) structure for photoelectrochemical water splitting. The expected high catalytic activity, transparency, stability and conductivity of RuO
₂
make this material highly appealing for preparation of a photoanode with high performance. Optical, electrical and photoelectrochemical properties of RuO
₂
based MIS structures are compared with MIS structures with a Ni catalytic layer. The lower overpotential V
_op
=0.12V of RuO
₂
structure compared to V
_op
=0.3V obtained for Ni structure as well as higher saturation photocurrent indicates promising application of the developed RuO
₂
structures for solar water splitting.