Cu20 Based Gas Sensor Prepared by Electrodeposition

This study is dedicated to fabrication and characterisation of a Cu
₂
O gas sensor prepared by potentiostatic electrodeposition on interdigitated electrodes. A new simple and low cost approach based on the overgrowth of IDE fingers by Cu
₂
O layer is used for fabrication of gas sensing structures. Tuning of the deposition charge is shown as a key factor to obtain optimal fingers overgrowth and Cu
₂
0 crystals interconnection and hence sensor sensitivity. Comparison of sensors prepared in electrolyte with KOH and LiOH buffers revealed superior sensitivity for the later type. The developed sensor achieved a sensitivity of 3.7 to 1000 ppm of H
₂
gas measured at 200°C.