Performance of MOSFETs with ultra thin ZrO/sub 2/ and Zr silicate gate dielectrics

In this paper, we report the transistor performance of both PMOS and NMOS fabricated with ZrO/sub 2/ and Zr-silicate gate dielectrics. These high-k films exhibit low leakage, low subthreshold swing (S), and good on-off characteristics. Good effective electron and hole mobilities were obtained. It was found that for Zr-silicate, a mobility closer to thermal SiO/sub 2/ was demonstrated due to the better interface with Si substrate.