Epitaxial Growth of InGaSb Layers on GaAs Substrates for Fabrication of InGaSb-based THz-QCLs

We propose InGaSb-well-based THz-QCLs for higher temperature operation. For the preparation of the MBE growth of the InGaSb-well-based QCLs, we optimize growth conditions of InGaSb layers on a GaAs substrate with introducing an In
_x
Gar
_1-x
Sb graded buffer layer.