Silicon Diode Uncooled FPA With Three-Dimensional Integrated CMOS Readout Circuits

This paper reports the design, fabrication, and test of a 3-D integrated uncooled focal plane array (FPA) using monocrystalline silicon diodes as thermosensitive devices. The diode array is fabricated from the silicon device layer of a silicon-on-insulator wafer, and the readout integrated circuits (ROICs) are fabricated on a bulk wafer using the CMOS technology. The silicon diode array is vertically integrated with the ROIC using the 3-D integration technology. Electroless nickel (Ni) plating is developed for fabricating substantial Ni posts to mechanically support the diode pixels to suspension and electrically connect the diode pixels to the ROIC. It allows the integration of monocrystalline device arrays with CMOS circuits fabricated using separate technologies and wafers in vertically suspended configuration. It also improves the filling factors of the FPA chips, shortens the wires between the diodes and the ROIC, and facilitates the releasing process to suspend the diode array. A 160×120 small-scale FPA has been developed as a test vehicle for concept verification. The test results and successful thermal imaging demonstrate the feasibility of the 3-D integration technology and verify the application of 3-D integration in the development of integrated FPAs using monocrystalline thermosensitive devices.