High-Voltage Capacitive Nonlinear Transmission Lines for RF Generation Based on Silicon Carbide Schottky Diodes

Nonlinear transmission lines (NLTLs) have been studied over the past several years to generate high-power radio frequency signals. Their operation consists of a lumped line based on the nonlinear behavior of the LC section components, capacitors or inductors, as a function of the applied voltage or current, respectively. However, considering high-power signals, the application of these devices using nonlinear ceramic capacitors as the capacitive lumped lines are restricted to frequencies around 100 MHz since at high voltages, parasitic impedances in the line structure limit the maximum operating frequency. On the other hand, the use of variable capacitance diodes has enabled the operation of NLTLs at higher frequencies. This paper provides the results of a study of NLTLs for RF generation based on silicon carbide Schottky diodes. The principle of operation and its simplified theory are presented. Initially, the voltage dependence of the diode capacitance is modeled. Experimental and simulation results are compared. Frequency oscillations around 200 MHz were generated. The extraction of the radio frequency energy is realized, and the radiation of the electromagnetic wave is performed using double-ridged horn antennas. Finally, some parameters are analyzed, and all results discussed.