The use of Films of Metal-Containing Nanocomposites with a Silicon-Carbon Matrix in Thermal Imitators of the Components of Micro-and Nanoelectronics

The installation scheme and features of the technology for obtaining alloyed diamond-like silicon-carbon films are presented and the heating elements based on these films are created to be used as thermal imitators of micro-and nanoelectronical products and their modules with increased specific heat flux (such as microprocessors, high-frequency microcircuits of the transmit-receive modules, LEDs, lasers, etc.). The matrix of the alloyed diamond-like silicon-carbon film has an amorphous nanocomposite structure, into which the inclusions having nanodimensions and composed of chromium and its compounds with carbon are introduced. Due to the controlled change in the parameters of the process of film deposition, it is possible to obtain a given specific resistance of a doped diamond-like silicon-carbon film over a wide range: from 10
^-4
to 10
¹⁴
Ω·cm. The electrical resistance of the manufactured heating elements with dimensions of 7×30×1 mm on the basis of a diamond-like silicon-carbon film 1 μm thick, doped with chromium, was 15 Ω. Using four such heating elements with a total resistance of 60 ohms made it possible to create a compact detachable thermal imitator of the electronic module with a maximum power of 806 W. Application of the developed thermal imitator accelerates the process of research and improvement of heat sink devices for products of micro-and nanoelectronics.