Research of the AlGaAs Impulse Properties

The impulse properties of Al
_x
Ga
_1-x
As (at x=0.225) are investigated by research of the “overshoot” effect of the charge carriers drift velocity. The effect of the rectangular electric field pulse parameters on the temporal and spatial distribution of the drift velocity is carried out by the numerical experiment. The impulse properties of Al
_0.225
Ga
_0.775
As and gallium arsenide are compared.