Optimization of Structure InAsx Sb1- xl GaAs Quantum Dot Solar Cell

This paper aims to model and simulate a new quantum dot solar cell InAs
_x
Sb
_l
-
_x
/GaAs. In this work, we have studied a many effects such as the effect of quantum dots insertion, the influence of strain compensation layers of GaP on the current-voltage characteristic, external quantum efficiency EQE and also on the optical properties by studing the photoluminescence PL spectra, for optimization. Moreover, some simulation results are compared to the availables measured results. Our results were shown that 30 layers of InAs
_0.8
Sb
_0.2
/ GaAs QD, provides a relative improvements of 2.82 % and 7.42 % of short-circuit current and efficiency, respectively. In addition, the absorption range edge of the pin GaAs solar cell extended from 870 nm to 950 nm. The use of strain compensation layers increases relatively the short-circuit current and efficiency of about 6 % and 10.80 %, respectively.