Green Vertical-Cavity Surface-Emitting Lasers Based on Combination of Blue-Emitting Quantum Wells and Cavity-Enhanced Recombination

We fabricated green vertical-cavity surface-emitting lasers by employing In
_x
Ga
_1-x
N/GaN quantum wells (QWs) active layers. The In fraction of the QW is 0.18 and the electroluminescence emission peak is around 445 nm, dominantly in the blue. With such QWs embedded in a microcavity, however, lasing was achieved at the emission edge (~493 nm), approaching to the green region. Such phenomenon is attributed to the cavity-enhanced recombination, where the cavity effect and photon-electron interactions or the gain enhancement factor play important roles.