A Nothing on Insulator - NOI - Nanotransistor Configuration Suitable for the Zaidman Model

This paper presents an alternative configuration of an atypical Silicon On Insulator (SOI) device with a vacuum cavity. In order to simulate carriers transport in vacuum electronic devices, the Silvaco tools recommend Zaidman model. In previous studies we obtained a null drain current through a Nothing On Insulator (NOI) transistor, if Zaidman model is adopted. The reasons come from the model conditions: the injected electrons in vacuum follow the electric field lines till they leave the vacuum and reach a metallic contact. This condition is in agreement with the vacuum triode configuration, having a metallic collector. If the drain region, which fulfill the collector role, is defined as conductor instead semiconductor, the drain current of this Nothing On Insulator transistor becomes non-null by Zaidman's model. The source region is kept as semiconductor island. For the first time, the NOI static characteristics are presented in this Zaidman compatible case.