A 1.9-kV/2.61-m ${\text{m}}\Omega\cdot$ cm2 Lateral GaN Schottky Barrier Diode on Silicon Substrate With Tungsten Anode and Low Turn-ON Voltage of 0.35 V

In this letter, we report the achievement of a high-performance lateral GaN Schottky barrier diode (SBD) on a silicon substrate with a low turn- ON voltage (
${V}_{ \mathrm{ON}}$
) of 0.35 V and tungsten (W) as the anode. Non-field-plated lateral GaN SBDs with the anode–cathode distances (
${L}_{\text {AC}}$
) of 6, 10, 15, 20, and
$25~\mu \text{m}$
demonstrate the reverse breakdown voltages of 0.6, 1.1, 1.25, 1.5, and 1.9 kV with the differential specific ON-resistances (
${R}_{\text{ON}, \text {sp}}$
) of 0.38, 0.72, 1.23, 1.87, and 2.61
$\text{m}\Omega \cdot $
cm
²
, respectively. The power figure-of-merit (FOM) is calculated to be
$ {1}\times 10^{ {3}}$
,
$ {1.7}\times {10}^{ {3}}$
,
$ {1.3}\times {10}^{ {3}}$
,
$ {1.2}\times {10}^{ {3}}$
, and
$ {1.4}\times {10}^{{3}}$
MW/cm
²
. To the best of our knowledge, this FOM of
${1.7}\times {10}^{{3}}$
MW/cm
²
is the highest among all the lateral GaN SBDs on a Si substrate. Combined with the ~10
⁸
current ON/OFF ratio at room temperature, the GaN SBD with the W anode shows a great promise for next-generation power electronics.