Analysis of LNA under multi-pulses IEMI

Intentionally electromagnetic interference (IEMI) such as high power microwave (HPM) and electromagnetic pulse (EMP) have been blamed for unexplained breakdowns and destructions of several vulnerable semiconductor devices. In this paper, breakdowns effects of LNA base on BJTs under IEMI are investigated numerically by device/circuit mix simulation algorithm based on drift-diffusion model (DDM) and Jacobian matrix. This paper focuses on the multi-pulses interference. Influence of recurrent interference pulses signals and assembled pulses of LNA are numerical studied. The influences of the sensitive parameters of multi-pulses IEMI are compared by the recovery time and leak voltages. The simulation results can be applied in damage mechanism analysis and harden designs of circuits against the IEMI and other external electromagnetic interferences.