Novel solutions to enable contact resistivity <1E-9 Ω-cm2 for 5nm node and beyond

In this paper, we present a solution for N&P MOS contact resistivity (p
_c
) improvement by adoption of highly doped epitaxial source/drain (S/D), contact ion implantation and advanced laser anneal. An ultra-low ρ
_c
=3D 9.01×10
^-10
Ωcm
²
on NMOS contact chain (CC) is achieved using highly doped (HD) Si:P selective epi in S/D combined with Ge PAI (pre-amorphization implant) and Applied Materials' nanosecond laser anneal (NLA). In addition, a record low ρ
_c
=3D 1.16 ×10
^-9
Ωcm
²
for PMOS CC is demonstrated by Si
_0.55
Ge
₀₄₅
:B epi, Ga cryo ion implant and NLA. NLA enables super-activation of implanted dopants and dopants in the in-situ HD S/D epi films ([P]: 3.0-10
²¹
cm
^-3
for NSD epi; [B]: 1.0x10
²¹
cm
^-3
for PSD epi). These new process technologies provide a pathway to achieve the target p
_c
required for transistor performance in advanced logic devices.