650 V E-Mode GaN HEMT Switching at 1 MHz for Travel Adapter Applications

This paper provides important design considerations and performance results for an elevated-frequency travel adapter application using a 650V E-GaN transistor. Performance, circuit functionality, and design challenges are presented for a 65W QR flyback travel adapter application. Steps taken to elevate the switching frequency of the adapter are addressed, and the ON Semiconductor 650V Enhancement-mode gallium nitride (E-GaN) high-electron mobility transistor (HEMT) in-circuit performance is presented.