Application of GaN-GITs in a Single-Phase T-Type Inverter

Power electronic converters applying GaN semiconductors are promising high efficiency and power density enabled through increased switching frequency and minimized switching losses. Fast switching raises the demand for minimized stray inductances but is more demanding to realize in the T-type topology. This paper demonstrates that the power semiconductors are excited to similar electrical stress when used in a single-phase T-type inverter or a conventional half-bridge configuration. The presented results suggest that the investigated devices are mainly limited by thermal performance and a bottom-side cooling concept. Despite an increased number of power semiconductors used in the T-type topology, a maximum efficiency of almost 99% is achieved at 150 kHz switching frequency.