High Performance 4H-SiC MOSFETs with Optimum Design of Active Cell and Re-Oxidation

Characteristics of our two varieties 2nd generation planar 4H-SiC MOSFETs are presented. By applying an optimized cell structure, newly designed 1200 V-class SiC-MOSFETs for larger current applications exhibit very low specific on-resistance of 3.0 mOmega cm (exp 2) at 25 deg C along with low switching losses. We have also realized 2nd generation high-threshold-voltage 1200 V-class SiC-MOSFETs for small current applications by employing our unique re-oxidation technique. The SiC-MOSFETs exhibit low specific on-resistance of 4.4 mOmega cm (exp 2) at 25 deg C with the highest level threshold voltage of 4.5 V. By utilizing these SiC-MOSFETs in accordance to power system requirements, applications of SiC power devices will expand in much larger fields.