Short Circuit Robustness Improvement by FEM Simulation on IGBT

In this work a Finite Element Model has been used to simulate the thermal behavior of a High Voltage IGBT during a Short Circuit Test (SCT), using front and back metal "cooling" solutions (different Copper thickness). The purpose is to evaluate by simulations if the proposed solutions, can improve the robustness of the device during the SCT. The electrical simulation conditions have been experimentally obtained by reproducing in laboratory the failure of the power sample devices during the SCT. A power failure profile of 140 KW for 13 mus generated in 30 micrometer silicon active area has been simulated and the effect of the Short Circuit Time (tsc) versus variation of both front and back metal options has been evaluated. Thermal maps have been used to compare the simulated trials.