S-parameter Based Simulation Modeling a Power Module Independent of Measurement Data

The authors present a measurement independent S-parameter model for a power module (PM) including SiC transistors in order to simulate its switching behaviors. Electromagnetic (EM) simulation creates the S-parameter component to represent the EM responses of the PM structure except for the semiconductor dies in the PM. This PM model is combined with the die model to build the simulation model of the whole structure. This modeling process needs no measurement data of the PM, but the combined model excellently predicts the experimental waveforms of the PM switching in an inductive load half-bridge circuit.