New SiC 1200 V Power MOSFET & Compact 3.25 mOhm, 41 mm Power Module for Industrial Applications

For the first time, a new SiC chip and module combination is designed and characterized to offer optimal performance and cost. The chip is a 1200 V, 13 mOmega SiC MOSFET designed for a 1/2 bridge power module with a possible reduced number of individual gate resistors inside the module and improved immunity to shoot-through. The MOSFET die has a minimal increase in RDSON from 13 mOmega at 25 deg C to only 20-22 mOmega at 175 deg C, and low CRSS of 12pF. Under normal operating conditions and thermal environment defined in the manuscript, each SiC MOSFET die is capable of 100-140 A of current under normal operating conditions of TC from 25 deg C to 95deg C, TJmax of 175 deg C. In a 1/2 bridge configuration, using a TO247 with no Kelvin contact, total switching energy loss is a relatively temperature independent 2.6 mJ at 600 V, 80A, even though designed for < 30kHz. The compact 41mm module allows up to four MOSFETs per switch position, IDS rating of 340 A (approximately seven times higher than Si baseline modules) and lower RDSON (3.25 mOmega) than commercial SiC modules over twice its size.