ReRAM Technologies for Embedded Memory and Further Applications

We have developed 40nm ReRAM for low-power embedded applications. Using resistive switching element process technologies and filament characterization methods to realize good switching characteristics, highly reliable 8M-bit 40nm ReRAM array characteristics were obtained in a mass production line. Endurance of 100k cycles and over 10 years' retention at 85 °C after 10k cycles were demonstrated. The potential to widen the range of ReRAM applications, such as their use in analog neuromorphic devices for low-power neural network processors and hydrogen sensors based on ReRAM technology, are also described.