Compact drain current modeling of InAs-OI-Si MOS transistor including quantum confinement

In this work report a physics based compact model of drain current for III-V-on-Insulator MOS transistor. The quantum confinement effect is been correctly incorporated using triangular potential well approximation. This model captures the variation of Fermi level, inversion carrier density and energy level of 1st sub-band with gate voltage inside quantum well. Our proposed model shows good agreement between modeling and TCAD simulation results. We implement the model in Verilog A environment and use in SPICE simulation framework. Our model predicted results match well with experimental data.