A Physics-Based Compact Model of SiC Junction Barrier Schottky Diode for Circuit Simulation

A physics-based compact model of silicon carbide (SiC) junction barrier Schottky diode for circuit simulation is developed in this paper. The semiconductor physics mechanism in SiC, such as temperature-dependent mobility and incomplete ionization, are considered. The detailed device parameters, including drift region concentration, drift thickness, active area, and Schottky barrier height, are modeled. Then, a datasheet-oriented parameter extraction procedure for the device parameters is presented for three kinds of commercial SiC Schottky diodes with junction barrier structure. The model is implemented in the circuit simulator PSpice. In order to verify this model, the Technology Computer-Aided Design Sentaurus simulation is conducted with the device parameters and physical models, which shows a good agreement with the PSpice simulation.