43 % Reduced program time, 23 % energy efficient ReRAM boost converter with PMOS switching transistor and boosted buffer circuit for ReRAM and NAND flash hybrid SSDs

Resistive RAM (ReRAM) boost converters with PMOS switching transistor operating at 1.0 V are proposed for 3D-integrated ReRAM and NAND flash hybrid SSDs with through silicon via (TSV). The proposed boost converter operating at 1.0 V uses PMOS switching transistor in order to solve the NMOS diode problem and raise the driving current. With the proposed boost converter, the boosting time is reduced by 42.8 % and the energy efficiency during programming ReRAM is improved by 22.8 %.