A physical current model for junction-modulated tunneling field-effect transistor with steep switching behavior

Compared with conventional tunneling field-effect transistor (TFET), the new junction-modulated TFET (JTFET) can reliably and effectively achieve much steeper switching behavior and higher ON current by only changing the gate layout configuration. To facilitate the JTFET circuit simulation, in this work, we establish a physical tunneling current model of JTFET based on the analytical surface potential modeling. The modeled results with different device parameters are in good agreement with the simulated results by Sentaurus TCAD tools, showing the validity of proposed model.