1100 V AlGaN/GaN MOSHEMTs With Integrated Tri-Anode Freewheeling Diodes

In this letter, we present high-performance reverse-conduction GaN-on-Si metal-oxide-semiconductor high-electron-mobility transistors (RC-MOSHEMTs) with integrated tri-anode freewheeling diodes. Tri-anode Schottky barrier diode presenting small turn-ON voltage (V
_ON
), ultra-low reverse leakage current, and high breakdown voltage (V
_BR
) was incorporated at portions of the drift region of AlGaN/GaN MOSHEMTs as freewheeling diodes. The tri-anode RC-MOSHEMTs exhibited outstanding reverse-conduction performance with a small V
_ON
of 0.55 V, along with a high V
_BR
of 1150 V, state-of-the-art low ON-resistance (R
_ON
) of 8.83 Ω · mm, and high-power figure-of-merit (FOM = V
_BR
2/R
_ON,SP
) of 1.32 GW/cm
²
. These results reveal the potential of the tri-gate/tri-anode technology for future integrated power electronic devices.