Electrical characterization of the carrier transport properties in a $\mathrm{Cu}(\mathrm{In},\mathrm{Ga})\mathrm{Se}_{2}$ solar cell

This work uses electrical characterization techniques to study the transport properties of carriers in the Cu(In,Ga)Se
₂
(CIGS) absorber of a thin-film photovoltaic device. The majority carrier (hole) density, mobility and resistivity are measured in the dark using a coordinated admittance spectroscopy and capacitance-voltage technique that takes advantage of the bias dependence of the modified dielectric relaxation in Cu(In,Ga)Se
₂
solar cell. The bulk of the data were taken at low temperatures where the temperature dependencies of the above carrier transport parameters are also measured.