Temperature dependent characteristics of GaInP/GaAs/GaInNAsSb solar cell under simulated AM0 spectra

We report on the temperature characteristics of GaInP/GaAs/GaInNAsSb triple junction solar cell monolithically grown by molecular beam epitaxy. In particular, we have compared the temperature dependent light-biased current-voltage characteristics of the cell at simulated AM0 spectral conditions produced by two solar simulators: a customized three band solar simulator and a Xenon simulator equipped with an AM0 filter. For the three band simulator, the temperature coefficients corresponding to short-circuit current density and open-circuit voltage were found to be 5.3 μA/cm
²
/°C and -6.8 mV/°C, respectively. These values are in agreement with literature reports for GaInP/GaAs/Ge solar cells. Illumination using a filtered single Xenon lamp leads to an erroneously high temperature coefficient value for short-circuit current density.