Performance Comparison of X- and $\gamma$ -Ray CdTe Detectors With MoOx, TiOx, and TiN Schottky Contacts

Electrical characteristics of Mo-MoO
_x
/p-CdTe/ MoO
_x
-Mo, Ti-TiO
_x
/p-CdTe/MoO
_x
-Mo, and Ti-TiN/p-CdTe/ MoO
_x
-Mo structures, manufactured by magnetron sputtering of the thin films on CdTe semi-insulating crystals, produced by Acrorad Co. Ltd. were studied. The optimization of conditions of the substrate pretreatment and the contacts deposition allowed to reduce the dark current of the Mo-MoO
_x
/p-CdTe/MoO
_x
-Mo detectors compared to earlier analogs and, consequently, to improve its spectrometric characteristics. Charge transport mechanisms in the structures under investigation were determined: the generation-recombination within the space-charge region at relatively low voltages and space charge limited currents at high voltages. There was shown that the structures Mo-MoO
_x
/p-CdTe/MoO
_x
-Mo, Ti-TiO
_x
/p-CdTe/MoO
_x
-Mo, and Ti-TiN/p-CdTe/MoO
_x
-Mo can be used for practical applications in the X- and γ-ray detectors.