Reverse-Blocking Normally-OFF GaN Double-Channel MOS-HEMT With Low Reverse Leakage Current and Low ON-State Resistance

An MOS field plate-protected Schottky-drain (gated Schottky-drain) is successfully integrated on a double-channel AlGaN/GaN MOS-HEMT to provide reverse blocking capability. The leakage suppression MOS field plate is deployed on the etched upper GaN channel layer after a barrier fully recess process, leading to a low reverse OFF-state leakage current of -20 nA/mm (at -100 V). The drain metal is deployed adjacent to the MOS field plate, contacting the upper MOS-channel and lower heterojunction channel from the sidewall. A metal-2DEG Schottky contact with a low turn-ON voltage of 0.5 V is achieved. Since the lower channel (below the MOS field plate) is separated from the etched surface of upper GaN channel layer, a high-conductivity MOS-gated channel with a sheet resistance of 806 Q/Square is obtained. The device exhibits a threshold voltage of +0.6 V (at 10 μA/mm and +1.9 V from linear extrapolation) and an ON-resistance of ~18 Ω·mm. Besides, a high forward (and reverse) breakdown voltage of 790 V (and -656 V, all at 10 μA/mm) is achieved.