Analysis of the Coupling Capacitance Between TSVs and Adjacent RDL Interconnections

This paper proposes an efficient method for extracting the coupling capacitance between through-silicon via (TSV) and the adjacent redistribution layer (RDL) interconnections based on the scalar potential integral equation and cylindrical accumulation mode basis functions. As the numerical integration of capacitance is very complicated, we employed an approximation based on the use of double-exponent transformation and the segmentation method to improve the calculation efficiency. The maximum deviation is less than 5%. The scalability of the proposed model is verified by performing parametric studies on different physical design parameters; the results show good agreement between the proposed model and the numerical simulation. Additionally, we studied several different structures of TSVs with and without RDLs to explain the influence of the coupling capacitance between TSVs and RDLs on crosstalk noise.