Optical response computations in type-II doped AlSb/InAs nano-heterostructure under external uniaxial strain in SWIR range

Transformations in wave symmetry and optical gain spectrum in type-II quantum well heterostructures is observed under external uniaxial strain. This paper reports the wavefunctions and optical gain in type II doped AlSb/InAs single quantum well heterostructure subjected to external uniaxial strain along [100] in SWIR range. Apart from optical gain, energy bandstructure along with valence and conduction band envelope functions have been computed under electromagnetic field perturbation. The 6×6 diagonalised k-p Hamiltonian has been solved and Luttinger-Kohn model is used for the computation of light and heavy hole energies. For the injected carrier density of 4 × 10
¹²
/ cm, the peak optical gain in TM polarization is found to be 3600/cm at 0.47 eV. Significant shift towards right is observed in the optical gain spectrum under uniaxial strain applied along [100].