Design optimization of high-performance low-temperature 0.18 /spl mu/m MOSFETs with low-impurity-density channels at supply voltage below 1 V

A 0.18 /spl mu/m nMOS structure with a vertically nonuniform low-impurity-density channel (LIDC) at 77 K has been studied at supply voltage below 1 volt. An abrupt Gaussian profile is used in the channel. The investigation is based on two-dimensional (2-D) energy transport simulation with appropriate models to account for quantum and low-temperature freeze-out effects. The study focuses on achieving high driving capability and low off-current at low supply voltage and on minimizing short-channel effects. Some guidelines are proposed for improving device performance and suppressing short-channel effects of the LIDC MOS devices. It is shown that at 77 K the optimized nonuniform LIDC 0.18 /spl mu/m nMOS structure with an abrupt impurity channel profile at supply voltage as low as 0.9 V is able to provide a saturation drain current comparable to that of a room-temperature LIDC 0.1 /spl mu/m nMOS device at 1.5 V. Furthermore, the 77 K LIDC 0.18 /spl mu/m nMOS consumes considerably lower dynamic and standby power than the room-temperature 0.1 /spl mu/m nMOS. These results suggest that the LIDC MOS structure with an abrupt channel profile is very suitable for low-power and high-speed ULSI applications at low temperature.