A Novel Hybrid Method for Estimating Channel Temperature and Extracting the AlGaN/GaN HEMTs Model Parameters

A new hybrid method for estimating channel temperature and extracting the AlGaN/GaN high electron mobility transistors (HEMTs) model parameters is proposed in this paper. The method studies the temperaturedependent feature of access resistances and estimates the channel temperature of tested device by using a novel scanning channel temperature optimization approach. For the first time, the relationship between thermal resistance (Rth) and bias voltage is used to ensure the accuracy of the HEMT device model. The estimated channel temperatures are experimentally verified by using the Raman spectroscopy method. For different sizes of the AlGaN/GaN HEMT device, the simulation results based on the proposed model are compared with the conventional model as well as the commercial model, a better agreement with the measurement data for the proposed method is achieved.