Radiation Effects on Deep Submicrometer SRAM-Based FPGAs Under the CERN Mixed-Field Radiation Environment

In this paper, the single-event effects on a 28-nm static random access memory-based field-programmable gate array (FPGA) under CERN's mixed-particle field are analyzed. The methodology followed for CERN electronics radiation hardness assurance and the particularities of testing an FPGA under a mixed-particle field are demonstrated. More specifically, the potential contribution of low-energy particles to the configuration memory (CRAM) and block memory (BRAM) bit upset sensitivity is investigated. By using a method of irradiating the device in different locations at CERN high-energy accelerator mixed field/facility with different particle energy spectra, it has been found that there is a significant impact of thermal neutrons, increasing the CRAM and BRAM cross section by a factor of ×3 . As a complement to this paper, an example application is also tested, in the context of future upgrades at the CERN accelerator complex. Results estimate that the application fails less than 10 times per year, leading to the conclusion that such devices may be used for low criticality applications along the accelerator complex.