Wideband Electromagnetic Model and Analysis of Shielded-Pair Through-Silicon Vias

The 3-D multistrata integration puts forward high requirements for signal integrity. The shielded-pair through-silicon vias (SPTSVs) proposed in this paper feature superior transmission properties and high jamming immunity suitable for differential-mode and common-mode transmission. Based on the quasi-static field theory, a wideband impedance model of SPTSVs considering the proximity effect, the line-to-line crosstalk, and the eddy current effect is derived. The parasitic parameters calculated by the impedance model are further given. The finite-element analysis shows that the proposed model highly agrees with the 3-D full-wave simulation and the analytical calculation. In addition, the characteristics of the impedance and the transmission coefficient are deeply analyzed with different design parameters. Finally, the impacts of the substrate effect and the metal-oxide-semiconductor effect on electrical characteristics of SPTSVs are revealed.