Feedback control of morphology during III-V semiconductor growth by molecular beam epitaxy

This paper addresses the modeling and control of epitaxial growth of III-V semiconductor material by Molecular Beam Epitaxy. To reliably achieve the required features, processing must use fundamental understanding of the atom-by-atom assembly of these structures and careful feedback design. One problem is to develop a model relating morphology, sensor variables, and control variables. Another is to design robust feedback for achieving a desired surface morphology. A novel new model is developed and presented here as well as modifications to a previously published model. Feedback design using both models is conducted; simulation results are shown.