Physics-Based Compact Model of Parasitic Bipolar Transistor for Single-Event Transients in FinFETs

A physics-based compact model of the parasitic bipolar current induced by an energetic particle is presented for single-event transients in FinFETs. The terminal charges are modeled to predict the body voltage of the FinFET in the transient correctly. The models are implemented using Verilog-A and are verified through 3-D technology computer-aided design (TCAD) simulations. The results of the modeling show good agreement with the TCAD data, for both structural variations and energy variations of the energetic particles.