Graphene nanoribbons for transistor applications

Recent developments in precursor-molecule-based synthetic chemistry have led to synthesis of graphene nanoribbons (GNRs) with atomic precision control of their edge shape and width, with and without dopants. These GNRs provide a class of quasi-1D systems with a rich set of highly unusual and tunable properties that holds great promise for nanoelectronics and other technologies. For example, the GNR quantum dots and quantum wells, which have been fabricated recently [1, 2], are alternatives to silicon-based transistors, while having a much smaller size in the order of 1 nm. In this work, we design and investigate the electronic properties of GNRs and boron nitride nanoribbons (BNNR) with different structural configurations by using model Hamiltonian methods and first-principles calculations. Based on the electronic property of GNRs and BNNRs studied, we explore their possible roles in future nanoribbon based electronic devices. We further design low-power energy-efficient nanoscale switcher and other nanoscale devices by using GNRs as structural components.